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| 2SD2653 Transistors Low frequency amplifier 2SD2653 !Application Low frequency amplifier Driver !External dimensions (Units : mm) Each lead has same dimensions 0.4 1.0MAX 0.85 0.7 !Features 1) A collector current is large. 2) VCE(sat) 180mV at IC = 1A / IB = 50mA ROHM : TSMT3 (3) 2.8 1.6 0~0.1 0.3~0.6 (1) (2) 0.95 0.95 1.9 0.16 2.9 Abbreviated symbol: FW (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Single pulse, PW=1ms Limits 15 12 6 2 4 500 150 -55~+150 Unit V V V A A mW C C !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 - - - 270 - - Typ. - - - - - 90 - 360 20 Max. - - - 100 100 180 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=10A IC=1mA IE=10A VCB=15V VEB=6V IC=1A, IB=50mA VCE=2V, IC=200mA VCE=2V, IE=-200mA, f=100MHz VCB=10V, IE=0A, f=1MHz !Packaging specifications Package Code Type 2SD2653 Basic ordering unit (pieces) Taping TL 3000 1/2 2SD2653 Transistors !Electrical characteristic curves COLLECTOR TO EMITTER SATURATION VOLTAGE : VCE(sat) (V) Ta=100C Ta=25C Ta=-40C VCE=2V Pulsed IC/IB=20/1 VCE=2V Pulsed 0.1 Ta=100C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 1 1 Ta=25C Pulsed DC CURRENT GAIN : hFE Ta=25C 0.1 100 Ta=-40C IC/IB=50/1 0.01 0.01 IC/IB=20/1 IC/IB=10/1 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 10 TRANSITION FREQUENCY : fT (MHz) 1000 VCE=2V Pulsed 1000 COLLECTOR CURRENT : IC (A) 1 SWITCHING TIME : (ns) Ta=25C VCE=2V f=100MHz Ta=25C VCE=5V f=100MHz 100 tstg Ta=100C Ta=25C 0.1 Ta=-40C 100 10 tdon tf 0.01 0.001 0 0.5 1 1.5 10 0.001 0.01 0.1 1 10 1 0.01 tr 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25C IC=0A f=1MHz Cib 100 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 |
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